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800nm High RI Oxide Pillars
Diffractive Optimal Element
SEM image of a 4-state pixelated polarizer made with NIL

800nm High RI Oxide Pillars
Polarizer Comparison Tool

Diffractive Optimal Element
Polarizer Comparison Tool

SEM image of a 4-state pixelated polarizer made with NIL
Polarizer Comparison Tool

NanoStructure Solutions™


MOXTEK has been producing nanostructured optical components for over 20 years. We offer high volume wafer replication of nanostructure devices on Ø200mm wafers. Our versatile capabilities are used to manufacture functional metasurfaces including: metalens, patterned nanostructures, Diffractive Optical Elements (DOE), waveguides, photonics crystals, and biosensor arrays. These devices are used for imaging, illumination, and display systems for a variety of applications including: automotive, medical/dental imaging, camera systems, and many others.

Moxtek collaborates with customers to design, verify and create solutions for high volume manufacturing. We provide options for prompt design iterations and NanoImprint Lithography (NIL) optimization. Moxtek uses Statistical Process Control (SPC) monitoring of post-print Critical Dimension (CD) repeatability.

Moxtek offers prototyping samples on our recurring Design Master Shuttle. This NIL Design Master Shuttle includes space for multiple (different) design structures, which allows engineers to test several designs on a single shuttle iteration thereby reducing development time/cost. We can add your unique design on our next Design Master Shuttle for prototyping your latest lens or nanostructure optical device. These design shuttles are processed multiple times a year.

Manufacturing Capabilities
  • High Volume Manufacturing
  • Prototyping Options
  • NanoImprint Lithography (NIL)
  • Design Master Shuttle
  • Master creation, Stamp making
  • Deposition (PECVD, Sputter, ALD)
  • Etching (metals, oxides low to high refractive index)
  • AFM and SEM
  • Optical metrology and inspection
Configurable Parameters
  • Minimum CD:  30nm
  • Master Aspect Ratio:  ≤ 2 (CD Height/Width)
  • Master Wafer Type:  Silicon (Preferred)
  • Master Wafer Size:  Ø300mm, Ø200mm (preferred) Ø150mm (acceptable)
  • Residual Layer Thickness:  15nm < X < 25nm
  • Substrate Detail:  Ø200mm glass/fused silica/silicon/sapphire Thickness: 0.675mm to 1.8mm
  • Resist Mask:  Oxide-based sol gel, UV curable, or nano particle resist